Citation/Abstract

First row transition metal complexes for the growth of thin films by atomic layer deposition are limited to only a few compounds. Our work describes the synthesis of manganese, iron, and cobalt source compounds for the growth of metal and metal oxide thin films for application as diffusion barriers in integrated circuits. Accordingly, manganese, iron, and cobalt complexes containing the β-diketiminato ligands [MeNC(Me)CHC(Me)NMe] and [((Me) ₂ N)NC(Me)CHC(Me)N(N(Me) ₂ ))] have been prepared and characterized by spectral and analytical methods and by X-ray crystallography. The β-diketiminato ligands are coordinated to the metal centers in η ² fashion in the prepared compounds. All complexes are volatile and thermally stable under sublimation conditions.